Electronic devices containing organic semiconductor materials

ABSTRACT

An electronic device includes first and second electrical contacts electrically coupled to a semiconductor polymer film, which includes mono-substituted diphenylhydrazone.

BACKGROUND DESCRIPTION OF THE ART

[0001] Over the past few years, the demand for ever cheaper and lighterweight portable electronic devices such as cell phones, personal digitalassistants, portable computers, smart credit and debit cards hasincreased dramatically. This has led to a growing need to manufacturedurable, lightweight, and low cost electronic circuits. The ability tofabricate such circuits is typically constrained by the need to utilizesilicon-based semiconductors and processing.

[0002] Currently the fabrication of semiconducting circuits on polymersubstrates, especially on flexible polymer substrates, is hindered bythe typical harsh processing conditions for silicon-based devices suchas high temperatures. Most polymer substrates have a relatively lowmelting or degradation temperature when compared to the deposition orannealing temperatures utilized in semiconductor processing. Thus, thesemiconductor circuit elements are typically fabricated on semiconductorsubstrates such as single crystal silicon, and then separately mountedon the polymer substrate, requiring further interconnections, processingand cost.

[0003] One technique utilized to circumvent the lack of mechanicalflexibility inherent in silicon-based devices is to use ultra thinflexible single crystal silicon wafers. However, this technique suffersfrom both the expense associated with the manufacture of such ultra thinwafers as well as the fragility problems associated with the handling ofsuch wafers and dies.

[0004] Another methodology utilized to get around the need for waferlevel processing is the use of amorphous silicon-based thin filmtransistors (TFTs). However, this technology generally requiresprocessing temperatures in the range of 300° C. to 400° C. thattypically results in the melting or severe degradation of most polymersubstrates.

[0005] There are a number of other problems in fabricatingsemiconducting circuits on polymer substrates. In general, only alimited number of polymers, such as polyimides, are available that canwithstand the temperatures utilized in fabricating siliconsemiconducting circuits. In addition, compatibility can be an issue; forexample the difference in thermal expansion between silicon and polymersis large, typically resulting in thermal stress that can affect deviceperformance. Under some conditions it can lead to delamination of thesilicon from the polymer substrate. Further, these polymers tend to havepoor optical qualities for display applications and are specializedpolymers that typically are expensive. The deposition of silicontypically requires sophisticated and expensive equipment that requires avacuum and is optimized for deposition on wafers. These problems renderimpractical the manufacture of durable, lightweight, and low costelectronic circuits will remain impractical.

SUMMARY OF THE INVENTION

[0006] An electronic device includes first and second electricalcontacts electrically coupled to a semiconductor polymer film, whichincludes mono-substituted diphenylhydrazone.

BRIEF DESCRIPTION OF THE DRAWINGS

[0007]FIG. 1 is a cross-sectional view of a two terminal electronicdevice according to an embodiment of this invention;

[0008]FIG. 2a is a cross-sectional view of a two terminal electronicdevice according to an embodiment of this invention;

[0009]FIG. 2b is a cross-sectional view of a two terminal electronicdevice according to an embodiment of this invention;

[0010]FIG. 3 is a cross-sectional view of a three terminal electronicdevice according to an embodiment of this invention;

[0011]FIG. 4a is a cross-sectional view of a three terminal electronicdevice according to an embodiment of this invention;

[0012]FIG. 4b is a cross-sectional view of a three terminal electronicdevice according to an embodiment of this invention;

[0013]FIG. 5 is a graph of the zero field hole mobility in cm² per voltsecond as a function of UV exposure time in minutes according to anembodiment of this invention;

[0014]FIG. 6a is a perspective view of a photosensitive programmablearray according to an embodiment of this invention;

[0015]FIG. 6b is a cross-sectional view of a logic cell according to anembodiment of this invention;

[0016]FIG. 6c is a cross-sectional view of a photosensitive programmablearray according to an embodiment of this invention;

[0017]FIG. 7 is a flow chart of a method of fabricating an electronicdevice according to an embodiment of this invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0018] Referring to FIG. 1, an exemplary embodiment of a two terminaldevice of the present invention is shown in a cross-sectional view. Inthis embodiment, electrical contacts 120 and 122 are formed onsemiconducting polymer film 110. The dopant material utilized insemiconducting polymer film 110 is a mono-substituted diphenylhydrazonecompound (DPH) having the structure R1-CH═N—N(C6H6)2, and preferably R1may be saturated carbon chains of from C1 to C6, unsaturated carbonchains of from C1 to C6, a cyclohexyl group, a cyclopentyl group,unsubstituted phenyl groups, substituted phenyl groups, unsubstitutedbenzyl groups, substituted benzyl groups, and mixtures thereof. Morepreferably, the dopant material is a di-substituted amino benzaldehydediphenylhydrazone having the structure R2R3-N—C6H6-CH═N—N(C6H6)2 whereR2 and R3 may independently be saturated carbon chains of from C1 to C6,unsaturated carbon chains of from C1 to C6, a cyclohexyl group, acyclopentyl group, unsubstituted phenyl groups, substituted phenylgroups, unsubstituted benzyl groups, substituted benzyl groups, andmixtures thereof. Particularly preferable is the compoundp-(diethylamino) benzaldehyde diphenylhydrazone.

[0019] Preferably, the dopant material is added to a binder material inthe range from about 10 weight percent to about 80 weight percent DPH,and more preferably from about 20 weight percent to about 50 weightpercent of DPH. The thickness of semiconducting polymer film 110 is inthe range from about 0.1 microns to about 25 microns, and preferably inthe range of about 1 micron to 15 microns. However, depending uponelectrical characteristics desired and the particular application of thedevice other thicknesses may be utilized.

[0020] As shown in FIG. 1, the exposure of semiconducting polymer film110 to UV radiation can be utilized to tune the conductivity ofsemiconducting polymer film 110 to a particular value. Preferably,electrical contacts 120, and 122 are UV absorbent materials that may actas a self aligned mask for the UV exposure, however, any of the otherstandard techniques such as shadow masks, lasers, or photolithographicmethods may also be utilized to expose selective areas.

[0021] The binder or matrix polymer for semiconducting film 110 may beselected from polycarbonate, polyester, polystyrene, polyvinylchloride,polymethylmethacrylate, polyvinyl acetate, vinylchloride/vinylacetatecopolymers, acrylic resin, polyacrylonitrile, polyamide, polyketones,polyacrylamide, and other similar materials. The material chosen for thebinder will depend on the particular electrical characteristics desired,processing conditions, as well as the environmental conditions in whichthe device will be utilized. However, for most applications, preferably,the binder is a polycarbonate, polystyrene, or polyester, and morepreferably the binder is a polycarbonate. An exemplary binder materialis a bisphenol-A-polycarbonate with a number average molecular weight(Mn) in the range from about 5,000 to about 50,000, more preferably fromabout 30,000 to about 35,000 and a polydispersity index of below about2.5. An example of a commercially available polycarbonate that can beused as a binder or matrix polymer is a bisphenol-A-polycarbonateavailable from The Bayer Group under the trademark “MAKROLON-5208” thathas an Mn of about 34,500 and a polydispersity index of about 2.

[0022] Electrical contacts 120 and 122 may be a metal layer, preferably,selected from gold, chromium, aluminum, indium, tin, lead, antimony,platinum, titanium, tungsten, tantalum, silver, copper, molybdenum, andsimilar metals as well as combinations thereof. In this embodiment,electrical contacts 120 and 122 may also be formed from conductivematerials such as polyaniline, polypyrrole, pentacene, anthracene,napthacene, phenanthrene, pyrene, thiophene compounds, conductive ink,and similar materials. The material chosen for the electrical contactswill depend on the particular electrical characteristics desired,processing conditions, as well as the environmental conditions in whichthe device will be utilized. However, for most applications, preferably,the electrical contacts are formed from polyaniline or thiophenecompounds such as poly (3,4-ethylene dioxythiophene) (PEDOT) orcamphorsulfonic acid doped polyaniline.

[0023] The thickness of the electrical contacts is preferably in therange from about 0.01 microns to about 1.0 micron, however, dependingupon characteristics desired both thicker and thinner contacts may beutilized. These metals and conductive materials as well as thicknessranges can also be utilized as the electrical contacts in the alternateembodiments described and shown below.

[0024] An alternate embodiment of the present invention is shown in across-sectional view in FIG. 2a. In this embodiment, semiconductingpolymer film or layer 210 is created over substrate 230. Electricalcontacts 220 and 222, are electrically coupled to semiconducting polymerfilm 210 as shown in FIG. 2a, and are created in substrate 230. However,electrical contacts 220 and 222 can also be created on substrate 230,and may be created from any of the metals or conductive materials, asdescribed above, for the embodiment shown in FIG. 1. In addition,electrical contacts 220 and 222 may be formed on top of semiconductorpolymer layer 210 (not shown) and thus, may act as a self aligned maskfor the UV exposure as described above. Passivation layer 250 is createdover semiconductor polymer film 210 and protects semiconductor polymerfilm from damage and environmental degradation. UV transmitting window240 is created over a portion of semiconducting polymer film 210providing the ability to tune the conductivity of semiconducting polymerfilm 210 to a particular value.

[0025] Substrate 230 may be formed from a wide variety of materials suchas silicon, gallium arsenide, glass, ceramic materials, and harder, morebrittle plastics may all be utilized. In addition, metals and alloys canalso be utilized. In particular, metals such as aluminum and tantalumthat electrochemically form oxides, such as anodized aluminum ortantalum, can be utilized. Preferably, substrate 230 is created from aflexible polymer material such as polyimide, polyester (PET),polyethylene naphthalate (PEN), as polyvinyl chloride, polybutyleneterephthalate (PBT), polyethylene naphthalate (PEN), polypropylene (PP),polyethylene (PE), polyurethane, polyamide, polyarylates, and polyesterbased liquid-crystal polymers to name a few. More preferably, substrate230 is formed from PET or PEN. The thickness of substrate 230 preferablyranges from about 5 to about 500 microns and more preferably from about5 to about 50 microns thick and particularly preferable is a range fromabout 10 to about 25 microns thick.

[0026] UV transmitting window 240 can be created from any materialhaving at least a 75 percent transmittance in the wavelength region fromabout 250 nm to about 500 nm. Preferably UV transmitting window 240 iscreated from indium tin oxide, silicon dioxide, polycarbonate,polystyrene or combinations thereof. The thickness of UV transmittingwindow 240, preferably, is in the range from about 0.5 microns to about1.0 micron; however, other thicknesses can be utilized depending on theparticular application of the circuit.

[0027] Passivation layer 250 can be created from a material having lessthan about 15 percent transmittance in the wavelength region from about250 nm to about 500 nm. Preferably passivation layer 250 has atransmittance of less than 5 percent in the above described wavelengthregion. Passivation layer 250, preferably, is formed from any of a widerange of polymeric materials such as polyimide, polyetherimides,polybutylene terephthalate, polyester, polyethylene naphthalate (PEN),or epoxy, to name a few. If electrical contacts 220 and 222 are formedto act as a self aligned mask for the UV exposure, as described above,then passivation layer 250 may be formed from the same material as UVtransmitting window 240.

[0028] An alternate embodiment of the present invention is shown in across-sectional view in FIG. 2b. In this embodiment, two semiconductingpolymer films or layers 210 and 210′ are created on substrate 230′ .Semiconducting polymer layer 210 is formed on a first side of substrate230′ analogous to the structures described above and shown in FIG. 2a.Electrical contacts 220 and 222 are electrically coupled tosemiconducting polymer layer 210 and passivation layer 250 and UVtransmitting window 240 are formed over semiconducting polymer layer210.

[0029] In addition, in this embodiment a second semiconducting polymerlayer 210′ is formed on a second side of substrate 230′ as shown in FIG.2b. Electrical contacts 220′ and 222′ are electrically coupled tosemiconducting polymer layer 210′ and passivation layer 250′ and UVtransmitting window 240′ are formed over semiconducting polymer layer210′. The structure, properties and materials utilized in the previousembodiments described above can be utilized in this embodiment as well.

[0030] Referring to FIG. 3, an exemplary embodiment of a three terminaldevice of the present invention is shown in a cross-sectional view. Inthis embodiment, electrical contacts 320 and 322 are formed on, andelectrically coupled to, semiconducting polymer film 310. In addition,electrical contact 326 is electrically coupled to semiconducting polymerfilm 310 via insulator 360 that is in contact with semiconductingpolymer film 310. Semiconducting polymer film 310 utilizes the dopantDPH. Insulator 360 is a dielectric material, preferably a polymer thatis non-polar, and more preferably polystyrene. However, other polymerssuch as polycarbonate, polyethylene, polypropylene, and polyvinylphenolas well as metal oxides and carbides, to name just a few, may also beutilized. In addition, the materials and properties described above forthe semiconducting polymer layer utilized in the two terminal device maybe utilized in this embodiment. Further, the structures, properties andmaterials for the electrical contacts described above in the twoterminal device can also be utilized in this embodiment for the threeterminal device.

[0031] As shown in FIG. 3, the exposure of semiconducting polymer film310 to UV radiation can be utilized to tune the conductivity ofsemiconducting polymer film 310 to a particular value. Preferably,electrical contacts 320, and 322 are UV absorbent materials that may actas a self-aligned mask for the UV exposure; however, other standardtechniques such as shadow masks or photolithographic methods may also beutilized to expose selective areas.

[0032] An alternate embodiment of a three terminal device of the presentinvention is shown in a cross-sectional view in FIG. 4a. In thisembodiment, electrical contact 426 is formed on substrate 430 andinsulator 460 is created at least over electrical contact 426 and may beformed as a layer over substrate 430. Electrical contacts 420 and 422are created on insulator 460, with semiconducting polymer film 410formed over electrical contacts 420 and 422, and insulator 460 as shownin FIG. 4a. Passivation layer 450 and UV transmitting window 440 arecreated over semiconducting film 410 as described, for the two terminaldevice, above and shown in FIG. 2a. Another structure that may beutilized is one in which electrical contacts 420 and 422 are createdover semiconducting film 410 (not shown) and thus, may act as a selfaligned mask for the UV exposure as described above.

[0033] An alternate embodiment of a three terminal device of the presentinvention is shown in a cross-sectional view in FIG. 4b. In thisembodiment, two semiconducting polymer films or layers 410 and 410′ arecreated on substrate 430′. Semiconducting polymer layer 410 is formed ona first side of substrate 430′ analogous to the structures describedabove and shown in FIG. 4a. Electrical contact 426 is formed onsubstrate 430′ and insulator 460 is created at least over electricalcontact 426 and may be formed as a layer over substrate 430′. Electricalcontacts 420 and 422 are created on insulator 460, with semiconductingpolymer film 410 formed over electrical contacts 420 and 422, andinsulator 460 as shown in FIG. 4a. Passivation layer 450 and UVtransmitting window 440 are created over semiconducting film 410 asdescribed, for the two terminal device, above and shown in FIG. 2a.Another structure that may be utilized is one in which electricalcontacts 420 and 422 are created over semiconducting film 410 (notshown) and as described above.

[0034] In addition, in this embodiment a second semiconducting polymerlayer 410′ is formed on a second side of substrate 430′ as shown in FIG.4b. Electrical contact 426′ is electrically coupled to semiconductorpolymer layer 410′, and is formed on substrate 430′. Insulator 460′ iscreated at least over electrical contact 426′ and may be formed as alayer over substrate 430′. Electrical contacts 420′ and 422′ areelectrically coupled to semiconducting polymer layer 410′, andpassivation layer 450′ and UV transmitting window 440′ are formed oversemiconducting polymer layer 410′. The structure, properties andmaterials utilized in the previous embodiments described above can beutilized in this embodiment as well.

[0035] The change in the zero field hole mobility in cm per volt secondas a function of UV exposure time in minutes is graphically shown inFIG. 5. The semiconducting polymer film was exposed using a mediumpressure 450 Watt mercury vapor lamp, although other sources of UV lightcould be used. The semiconducting polymer film used to obtain the datafor FIG. 5 was prepared by dissolving 41 weight percent ofN,N-diethylamino benzaldehyde-1,1-diphenylhydrazone (DEH) andbisphenol-A-polycarbonate in HPLC grade tetrahydrofuran. Samples werethen prepared by solvent coating the above solution onto semitransparentaluminized PET substrates. The coated substrates were oven dried, inair, at 100 C. for one hour to reduce residual solvent content.Electrical contacts were created using an electron beam evaporationprocess. The gold contacts were approximately 1 cm. in diameter andabout 0.5 microns thick. The average film thickness of thesemiconducting polymer film was about 11.0 microns. As the exposure timeis increased, more and more DEH molecules are photoconverted, therebyeffectively removing DEH molecules from the charge transport process,resulting in a decrease in the hole conductivity in the molecularlydoped polymeric circuit element. As shown in FIG. 5, UV exposure resultsin a decrease of approximately three orders of magnitude in the chargemobility of the semiconductor polymer film. The decrease inconductivity, generated by exposure to UV light, can be reversed byheating the sample above the glass transition temperature of the bindermaterial utilized in the semiconductor polymer film.

[0036] Referring to FIG. 6a, an exemplary embodiment of a photosensitiveprogrammable array of the present invention is shown in a perspectiveview. In this embodiment, semiconducting polymer film 610 forms afunctional medium having a non-linear impedance characteristic. On thetop surface, also referred to as the first side, of semiconductingpolymer film 610, a plurality of electrical conductors 670 are formedand are denoted as U_(j). Electrical conductors 670 are substantiallyparallel to each other. On the bottom surface, also referred to as thesecond side, of semiconducting polymer film 610 are formed acorresponding plurality of electrical conductors 672 that aresubstantially parallel to each other and are substantially mutuallyorthogonal to electrical conductors 670. The electrical conductors 672are denoted as C_(i). The combination of electrical conductors 670 and672 form a planar orthogonal x, y matrix. Logic cell 675 is formed inthe volume between any two intersecting electrical conductors.

[0037] A more detailed cross-sectional view of logic cell 675 is shownin FIG. 6b. In this embodiment, electrical conductor 670′ is anelectrically conductive material having at least a 75 percenttransmittance in the wavelength region from about 250 nm to about 500 nmsuch as indium tin oxide. Electrical conductor 672 may be formed fromany of the electrically conductive materials for the two and threeterminal devices described above. Semiconducting polymer film 610 isalso formed from any of the materials described above for thesemiconductor layer utilized in two and three terminal devices.

[0038] As described earlier (see FIG. 5) the exposure of semiconductingpolymer film 610 will result in a decrease in conductivity. Thus, byselectively exposing the volume of the semiconductor polymer filmbetween any two intersecting electrical conductors, the conductivity ofa logic cell can be reduced. The change in conductivity depends on thetime of exposure to UV radiation. The electrical conductivity of theexposed volume of semiconducting polymer changes state from conductiveto substantially non-conductive. Such a resultant change can be adifference of up to three orders of magnitude or more in conductivity,as shown in FIG. 5, whereby the photoconversion process produces a highresistance bridge or open link. The selective exposure of various logiccells to UV radiation is preferably by laser pulses; however, any of theother standard techniques such as shadow masks or photolithographicmethods may also be utilized to expose selective cells. An array ofpassive logic cells can be formed that are either in a conductive ornon-conductive state representing a 0 or 1. In addition, the presentinvention also enables the ability to restore a non-conductive logiccell, that was exposed to UV radiation, to a conductive state by heatingthe volume of the semiconductor polymer film above the glass transitiontemperature of the binder material utilized. This heating operation canpreferably be performed using a laser pulse, although other heatingtechniques can also be utilized.

[0039] An alternate embodiment of the present invention is shown in across-sectional view in FIG. 6c. In this embodiment, two semiconductingpolymer films or layers 610 and 610′ are created on substrate 630′. Aplurality of electrical conductors 672 are electrically coupled to thebottom surface of semiconducting layer 610 and are formed on the firstside of substrate 630. However, the plurality of electrical conductors672 may also be created on substrate 630, and may be created from any ofthe metals or conductive materials as described above. On the topsurface of semiconducting polymer film 610 a plurality of electricalconductors 670 are formed and are substantially mutually orthogonal toelectrical conductors 672.

[0040] A plurality of electrical conductors 672′ are electricallycoupled to the bottom surface of semiconducting layer 610′ and areformed on the second side of substrate 630. However, the plurality ofelectrical conductors 672′ may also be created on substrate 630, and maybe created from any of the metals or conductive materials as describedabove. On the top surface of semiconducting polymer film 610′ aplurality of electrical conductors 670′ are formed and are substantiallymutually orthogonal to electrical conductors 672′. Such a dual layerphotosensitive programmable array provides on the order of 5.0 Gbits/cm2using traditional lithographic technologies for patterning and creatingthe electrical conductors. Patterning of the semiconductor polymer layer610 and 610′ is not required to achieve this bit density.

[0041] A method of manufacturing an electronic device utilizing asemiconducting layer including DPH is shown as a flow diagram in FIG. 7.Although the description will describe the process utilized to fabricatea single layer device on one side of the substrate, the process used toform a dual layer structure, as shown in FIGS. 2b, 4 b, and 6 c, isaccomplished by repeating the steps described on the second side of thesubstrate. In step 702 a semiconducting polymer layer including DPH iscreated. The particular binder chosen will depend, for example, on theparticular electronic properties desired, the environment in which thedevice will be used, whether a two or a three terminal device or aprogrammable array or some combination thereof will be utilized.Depending on the particular binder chosen the appropriate solvents areutilized that provide sufficient solubility for both the binder and theDPH as well as providing appropriate viscosity for the particularcoating or casting process chosen. An exemplary process for creating asemiconductor polymer layer uses HPLC grade tetrahydrofuran as a solventto dissolve the binder bisphenol-A-polycarbonate and the DPH inappropriate concentrations to obtain the desired electrical properties.If a substrate is utilized, as shown, for example, in FIGS. 2a and 2 b,then the composition and properties of the substrate are also taken intoconsideration, in order to obtain good adhesion between the substrateand the semiconductor polymer layer.

[0042] The creation of electrical contacts is accomplished in step 704.Depending on the particular material chosen to generate the electricalcontact this step may consist of sputter deposition, electron beamevaporation, thermal evaporation, or chemical vapor deposition of eithermetals or alloys. Conductive materials such as polyaniline, polypyrrole,pentacene, thiophene compounds,or conductive inks, may utilize any ofthe techniques used to create thin organic films may be utilized. Forexample, screen printing, spin coating, dip coating, spray coating, inkjet deposition and in some cases, as with PEDOT, thermal evaporation aretechniques that may be used. Depending on the particular electronicdevice being fabricated, the electrical contacts may be created eitheron a substrate or directly on the semiconducting polymer film.Patterning of the electrical contacts is accomplished by any of thegenerally available photolithographic techniques utilized insemiconductor processing. However, depending on the particular materialchosen, other techniques such as laser ablation or ink jet depositionmay also be utilized. In addition, combinations of different conductivematerials may also be utilized that might result in very differentprocesses being utilized. For example in a programmable array it may bedesirable to utilize PEDOT as the material for the lower electricaltraces and indium tin oxide for the upper UV transmitting electricaltraces.

[0043] In step 706 a passivation layer is created to protect thesemiconductor polymer film from damage and environmental degradationwhen appropriate. Any of the techniques mentioned above for the creationof the electrical contacts may also be utilized to create thepassivation layer. In addition to those techniques, any of thetechniques utilized to create dielectric materials and films may also beutilized as well as techniques such as lamination and casting.

[0044] The creation of an UV transmitting window to enablephotoconversion of the DPH molecules is accomplished in step 708 whenappropriate. Any of techniques mentioned above for creation of thepassivation layer or electrical contacts may also be utilized to createthe UV transmitting window depending on the particular material chosenfor the window. For example, if the UV transmitting window is apolycarbonate material, then casting, spin coating, or screen printingare just a few examples of the processes that can be used to create thewindow. However, if for example, silicon dioxide is used as the windowmaterial then spin coating of a spin on glass material or sputterdeposition or chemical vapor deposition may be utilized.

What is claimed is:
 1. An electronic device comprising: a firstsemiconducting polymer film, which includes mono-substituteddiphenylhydrazone (DPH), electrically coupled to both a first electricalcontact and a second electrical contact.
 2. The electronic device ofclaim 1, wherein a predetermined exposure of said semiconductingpolymer, reduces the electrical conductivity of said exposedsemiconducting polymer.
 3. The electronic device of claim 1, furthercomprising: a first insulator in contact with at least a portion of saidfirst semiconducting polymer layer; and a third electrical contact incontact with at least a portion of said first insulator.
 4. Theelectronic device of claim 3, wherein said first electrical contact,further comprises a conductive material selected from the groupconsisting of polyaniline, polypyrrole, pentacene, anthracene,napthacene, phenanthrene, pyrene, thiophene, conductive ink, andcombinations thereof.
 5. The electronic device of claim 3, wherein saidthird electrical contact, further comprises a conductive materialselected from the group consisting of polyaniline, polypyrrole,pentacene, anthracene, napthacene, phenanthrene, pyrene, thiophene,conductive ink, and combinations thereof.
 6. The electronic device ofclaim 3, wherein said first electrical contact, is comprised of a metalselected from the group consisting of gold, chromium, aluminum,platinum, titanium, tungsten, tantalum, silver, copper, molybdenum, andcombinations thereof.
 7. The electronic device of claim 3, wherein saidthird electrical contact is comprised of a metal selected from the groupconsisting of gold, chromium, aluminum, platinum, titanium, tungsten,tantalum, silver, copper, molybdenum, and combinations thereof.
 8. Theelectronic device of claim 3, wherein said first insulator is a polymer.9. The electronic device of claim 8, wherein said first polymerinsulator is selected from the group consisting of polycarbonate,polystyrene, polyvinylphenol, polyethylene, polypropylene and mixturesthereof.
 10. The electronic device of claim 1, further comprising afirst passivation layer disposed over a portion of said firstsemiconducting polymer layer.
 11. The electronic device of claim 10,wherein said first passivation layer is selected from the groupconsisting of polyimide, polyetherimides, polyester, polyethylenenaphthalate, epoxy, polybutylene terephthalate, and mixtures thereof.12. The electronic device of claim 1, further comprising a firstultraviolet transmitting window disposed over a portion of said firstsemiconducting polymer layer.
 13. The electronic device of claim 12,wherein said first ultraviolet transmitting window has a transmittanceof at least 75% in the wavelengths from about 250 nm to about 500 nm.14. The electronic device of claim 12, wherein said first ultraviolettransmitting window material is selected from the group consisting ofsilicon dioxide, polycarbonate, polystyrene, indium tin oxide,polyethylene terephthalate, and combinations thereof.
 15. The electronicdevice of claim 1, wherein said first semiconducting polymer layerincludes DPH in the range from about 20 weight percent to about 50weight percent.
 16. The electronic device of claim 1, further comprisinga substrate having a first side and a second side wherein said firstelectrical contact, said second electrical contact, and said firstsemiconducting polymer layer are disposed over said first side of saidsubstrate.
 17. The electronic device claim 16, further comprising: afourth electrical contact and a fifth electrical contact disposed oversaid second side of said substrate; and a second semiconducting polymerfilm, which includes mono-substituted diphenylhydrazone (DPH), disposedover said second side of said substrate, and electrically coupled tosaid third electrical contact and said fourth electrical contact. 18.The electronic device of claim 17, further comprising: a secondinsulator in contact with at least a portion of said secondsemiconducting polymer layer; and a sixth electrical contact in contactwith at least a portion of said second insulator.
 19. The electronicdevice of claim 17, further comprising a second passivation layerdisposed over a portion of said second semiconducting polymer layer. 20.The electronic device of claim 17, further comprising a secondultraviolet transmitting window disposed over a portion of said secondsemiconducting polymer layer.
 21. The electronic device of claim 17,wherein said second semiconducting polymer layer includes DPH in therange from about 20 weight percent to about 50 weight percent.
 22. Theelectronic device of claim 16, wherein said substrate is flexible. 23.The electronic device of claim 22, wherein said flexible substrate isselected from the group consisting of polyethylene terephthalate,polyethylene naphthalate, polyimide, polyacrylate, liquid crystalpolymer, polyvinyl chloride, polyamide, polyarylates, polybutyleneterephthalate and combinations thereof.
 24. The electronic device ofclaim 16, wherein said substrate is selected from the group consistingof silicon, glass, polycarbonate, aluminum oxide, and boron nitride. 25.The electronic device of claim 1, having the structure R1-CH═N—N(C6H6)2,wherein said R1 is selected from the group consisting of saturatedcarbon chains of from C1 to C6, unsaturated carbon chains of from C1 toC6, a cyclohexyl group, a cyclopentyl group, unsubstituted phenylgroups, substituted phenyl groups, unsubstituted benzyl groups,substituted benzyl groups, and mixtures thereof.
 26. The electronicdevice of claim 1, wherein said mono-substituted diphenylhydrazone is(R2R3-amino) benzaldehyde diphenylhydrazone, wherein said R2 and said R3substituents are independently selected from the group consisting ofsaturated carbon chains of from C1 to C6, unsaturated carbon chains offrom C1 to C6, a cyclohexyl group, a cyclopentyl group, unsubstitutedphenyl groups, substituted phenyl groups, unsubstituted benzyl groups,substituted benzyl groups, and mixtures thereof.
 27. The electronicdevice of claim 1, wherein said mono-substituted diphenylhydrazone isselected from the group consisting of N,N-diethylaminobenzaldehyde-1,1-diphenylhydrazone, N,N-dimethylaminobenzaldehyde-1,1-diphenylhydrazone, N,N-diphenylaminobenzaldehyde-1,1-diphenylhydrazone, N,N-dibenzylaminobenzaldehyde-1,1-diphenylhydrazone, and mixtures thereof.
 28. Theelectronic device of claim 1, wherein heating said semiconductingpolymer film above the glass transition temperature of a binder polymerincreases the electrical conductivity of said semiconducting polymerfilm.
 29. An electronic device comprising: a first electrical contactand a second electrical contact; and a first semiconducting polymerlayer including p-(diethylamino) benzaldehyde diphenylhydrazone (DEH)electrically coupled to said first electrical contact, and said secondelectrical contact.
 30. An electrically addressable device comprising: afirst semiconducting polymer film, which includes mono-substituteddiphenylhydrazone (DPH), having a first side and a second side; a firstplurality of electrical conductors substantially parallel to each otherin contact with said first side of said semiconducting polymer layer;and a first plurality of ultraviolet transmitting electrical conductorssubstantially parallel to each other, in contact with said second sideof said first semiconducting polymer layer and substantially mutuallyorthogonal to said first plurality of electrical conductors.
 31. Theelectronic device of claim 30, further comprising a substrate having afirst side and a second side, wherein said first plurality of electricalconductors is disposed over said first side of said substrate.
 32. Theelectronic device of claim 31, further comprising: a second plurality ofelectrical conductors substantially parallel to each other disposed oversaid second side of said substrate; a second semiconducting polymerfilm, which includes mono-substituted diphenylhydrazone (DPH)disposedover said second side of said substrate, and in contact with said secondplurality of electrical conductors; and a second plurality ofultraviolet transmitting electrical conductors substantially parallel toeach other, in contact with said second semiconducting polymer layer andsubstantially mutually orthogonal to said second plurality of electricalconductors.
 33. The electronic device of claim 30, wherein said firstplurality of ultraviolet transmitting electrical conductors furthercomprises indium tin oxide.
 34. The electronic device of claim 30,wherein said first semiconducting polymer layer includes DPH in therange from about 20 weight percent to about 50 weight percent.
 35. Amethod of fabricating an electronic device comprising the step ofcreating a first electrical contact and a second electrical contact on aa first semiconducting polymer film, which includes mono-substituteddiphenylhydrazone (DPH),
 36. The method of claim 35, further comprisingthe steps of: creating a first insulator layer in contact with saidfirst semiconducting polymer layer; and creating a third electricalcontact on said first insulator layer.
 37. The method of claim 36,wherein said step of creating a first electrical contact and a secondelectrical contact further comprises the step of depositing a firstelectrical contact and a second electrical contact utilizing an ink jetdeposition system.
 38. The method of claim 36, wherein said step ofcreating a third electrical contact further comprises the step ofdepositing a third electrical contact utilizing an ink jet depositionsystem.
 39. The method of claim 35, further comprising the step ofcreating a first passivation layer over a portion of said firstsemiconducting polymer layer.
 40. The method of claim 35, furthercomprising the step of creating a first ultraviolet window over aportion of said first semiconducting polymer layer.
 41. The method ofclaim 35, further comprising the step of creating a substrate, having afirst side and a second side wherein said first electrical contact, saidsecond electrical contact, and said first semiconducting polymer layerare formed over said first side of said substrate.
 42. The method ofclaim 41, further comprising the step of creating a fourth electricalcontact and a fifth electrical contact on a second semiconductingpolymer film, which includes mono-substituted diphenylhydrazone (DPH),formed over said second side of said substrate.
 43. The method of claim42, further comprising the steps of: creating a second insulator layerin contact with said second semiconducting polymer layer; and creating asixth electrical contact on said second insulator layer.
 44. The methodof claim 35, further comprising the step of creating a secondpassivation layer over a portion of said second semiconducting polymerlayer.
 45. The method of claim 35, further comprising the step ofcreating a second ultraviolet window over a portion of said secondsemiconducting polymer layer.
 46. A method of manufacturing anelectrically addressable device comprising the steps of: creating afirst semiconducting polymer film, which includes mono-substituteddiphenylhydrazone (DPH), having a first side and a second side; creatinga first plurality of electrical conductors substantially parallel toeach in contact with said first side of said first semiconductingpolymer layer; and creating a first plurality of ultraviolettransmitting electrical conductors substantially parallel to each other,in contact with said second side of said first semiconducting polymerlayer and substantially mutually orthogonal to said first plurality ofelectrical conductors.
 47. The method of claim 46, further comprisingthe steps of: creating a substrate having a first side and a secondside, wherein said first plurality of electrical conductors is disposedover said first side of said substrate creating a second plurality ofelectrical conductors substantially parallel to each other disposed onsaid second side of said substrate; creating a second semiconductingpolymer film, which includes mono-substituted diphenylhydrazone (DPH),disposed over said second side of said substrate, and in contact withsaid second plurality of electrical conductors; and creating a secondplurality of ultraviolet transmitting electrical conductorssubstantially parallel to each other, in contact with said secondsemiconducting polymer layer and substantially mutually orthogonal tosaid second plurality of electrical conductors.
 48. A method of changingthe property of a semiconducting polymer film comprising the steps of:exposing a semiconducting polymer, which includes mono-substituteddiphenylhyrdazone (DPH), to ultraviolet radiation; waiting for aspecified period of time; and stopping exposure of said semiconductingpolymer film to ultraviolet radiation, wherein the zero field holemobility of said semiconducting polymer is reduced.
 49. A method ofreducing the electrical conductivity of a logic cell comprising thesteps of: exposing a semiconducting polymer, which includesmono-substituted diphenylhyrdazone (DPH), to ultraviolet radiation;waiting for a specified period of time; and stopping exposure of saidsemiconducting polymer to ultraviolet radiation, wherein the electricalconductivity of said exposed semiconducting polymer is reduced.
 50. Themethod of claim 45, wherein the electrical conductivity of said exposedsemiconducting polymer changes state from conductive to substantiallynon-conductive.
 51. A method of restoring the electrical conductivity ofa semiconducting polymer film comprising the step of heating asemiconducting polymer, which includes mono-substituteddiphenylhyrdazone (DPH), above the glass transition temperature of abinder polymer.